E1000_WRITE_FLUSH(hw);
}
/* fall through */
- case e1000_82571:
- case e1000_82572:
- case e1000_ich8lan:
- case e1000_80003es2lan:
+ default:
+ /* Auto read done will delay 5ms or poll based on mac type */
ret_val = e1000_get_auto_rd_done(hw);
if (ret_val)
- /* We don't want to continue accessing MAC registers. */
return ret_val;
break;
- default:
- /* Wait for EEPROM reload (it happens automatically) */
- msleep(5);
- break;
}
/* Disable HW ARPs on ASF enabled adapters */
swfw = E1000_SWFW_PHY0_SM;
}
if (e1000_swfw_sync_acquire(hw, swfw)) {
- e1000_release_software_semaphore(hw);
+ DEBUGOUT("Unable to acquire swfw sync\n");
return -E1000_ERR_SWFW_SYNC;
}
/* Read the device control register and assert the E1000_CTRL_PHY_RST
if (ret_val)
return E1000_SUCCESS;
- switch (hw->mac_type) {
- case e1000_82541_rev_2:
- case e1000_82571:
- case e1000_82572:
- case e1000_ich8lan:
+ switch (hw->phy_type) {
+ case e1000_phy_igp:
+ case e1000_phy_igp_2:
+ case e1000_phy_igp_3:
+ case e1000_phy_ife:
ret_val = e1000_phy_hw_reset(hw);
if (ret_val)
return ret_val;
DEBUGFUNC("e1000_detect_gig_phy");
+ if (hw->phy_id != 0)
+ return E1000_SUCCESS;
+
/* The 82571 firmware may still be configuring the PHY. In this
* case, we cannot access the PHY until the configuration is done. So
* we explicitly set the PHY values. */
{
struct e1000_eeprom_info *eeprom = &hw->eeprom;
uint32_t i = 0;
- int32_t ret_val;
DEBUGFUNC("e1000_read_eeprom");
+ /* If eeprom is not yet detected, do so now */
+ if (eeprom->word_size == 0)
+ e1000_init_eeprom_params(hw);
+
/* A check for invalid values: offset too large, too many words, and not
* enough words.
*/
if ((offset >= eeprom->word_size) || (words > eeprom->word_size - offset) ||
(words == 0)) {
- DEBUGOUT("\"words\" parameter out of bounds\n");
+ DEBUGOUT2("\"words\" parameter out of bounds. Words = %d, size = %d\n", offset, eeprom->word_size);
return -E1000_ERR_EEPROM;
}
- /* FLASH reads without acquiring the semaphore are safe */
+ /* EEPROM's that don't use EERD to read require us to bit-bang the SPI
+ * directly. In this case, we need to acquire the EEPROM so that
+ * FW or other port software does not interrupt.
+ */
if (e1000_is_onboard_nvm_eeprom(hw) == TRUE &&
hw->eeprom.use_eerd == FALSE) {
- switch (hw->mac_type) {
- case e1000_80003es2lan:
- break;
- default:
- /* Prepare the EEPROM for reading */
- if (e1000_acquire_eeprom(hw) != E1000_SUCCESS)
- return -E1000_ERR_EEPROM;
- break;
- }
+ /* Prepare the EEPROM for bit-bang reading */
+ if (e1000_acquire_eeprom(hw) != E1000_SUCCESS)
+ return -E1000_ERR_EEPROM;
}
- if (eeprom->use_eerd == TRUE) {
- ret_val = e1000_read_eeprom_eerd(hw, offset, words, data);
- if ((e1000_is_onboard_nvm_eeprom(hw) == TRUE) ||
- (hw->mac_type != e1000_82573))
- e1000_release_eeprom(hw);
- return ret_val;
- }
+ /* Eerd register EEPROM access requires no eeprom aquire/release */
+ if (eeprom->use_eerd == TRUE)
+ return e1000_read_eeprom_eerd(hw, offset, words, data);
+ /* ICH EEPROM access is done via the ICH flash controller */
if (eeprom->type == e1000_eeprom_ich8)
return e1000_read_eeprom_ich8(hw, offset, words, data);
+ /* Set up the SPI or Microwire EEPROM for bit-bang reading. We have
+ * acquired the EEPROM at this point, so any returns should relase it */
if (eeprom->type == e1000_eeprom_spi) {
uint16_t word_in;
uint8_t read_opcode = EEPROM_READ_OPCODE_SPI;
DEBUGFUNC("e1000_write_eeprom");
+ /* If eeprom is not yet detected, do so now */
+ if (eeprom->word_size == 0)
+ e1000_init_eeprom_params(hw);
+
/* A check for invalid values: offset too large, too many words, and not
* enough words.
*/
int32_t error = E1000_SUCCESS;
uint32_t old_bank_offset = 0;
uint32_t new_bank_offset = 0;
- uint32_t sector_retries = 0;
uint8_t low_byte = 0;
uint8_t high_byte = 0;
- uint8_t temp_byte = 0;
boolean_t sector_write_failed = FALSE;
if (hw->mac_type == e1000_82573) {
e1000_erase_ich8_4k_segment(hw, 0);
}
- do {
- sector_write_failed = FALSE;
- /* Loop for every byte in the shadow RAM,
- * which is in units of words. */
- for (i = 0; i < E1000_SHADOW_RAM_WORDS; i++) {
- /* Determine whether to write the value stored
- * in the other NVM bank or a modified value stored
- * in the shadow RAM */
- if (hw->eeprom_shadow_ram[i].modified == TRUE) {
- low_byte = (uint8_t)hw->eeprom_shadow_ram[i].eeprom_word;
- e1000_read_ich8_byte(hw, (i << 1) + old_bank_offset,
- &temp_byte);
- udelay(100);
- error = e1000_verify_write_ich8_byte(hw,
- (i << 1) + new_bank_offset,
- low_byte);
- if (error != E1000_SUCCESS)
- sector_write_failed = TRUE;
+ sector_write_failed = FALSE;
+ /* Loop for every byte in the shadow RAM,
+ * which is in units of words. */
+ for (i = 0; i < E1000_SHADOW_RAM_WORDS; i++) {
+ /* Determine whether to write the value stored
+ * in the other NVM bank or a modified value stored
+ * in the shadow RAM */
+ if (hw->eeprom_shadow_ram[i].modified == TRUE) {
+ low_byte = (uint8_t)hw->eeprom_shadow_ram[i].eeprom_word;
+ udelay(100);
+ error = e1000_verify_write_ich8_byte(hw,
+ (i << 1) + new_bank_offset, low_byte);
+
+ if (error != E1000_SUCCESS)
+ sector_write_failed = TRUE;
+ else {
high_byte =
(uint8_t)(hw->eeprom_shadow_ram[i].eeprom_word >> 8);
- e1000_read_ich8_byte(hw, (i << 1) + old_bank_offset + 1,
- &temp_byte);
- udelay(100);
- } else {
- e1000_read_ich8_byte(hw, (i << 1) + old_bank_offset,
- &low_byte);
udelay(100);
- error = e1000_verify_write_ich8_byte(hw,
- (i << 1) + new_bank_offset, low_byte);
- if (error != E1000_SUCCESS)
- sector_write_failed = TRUE;
+ }
+ } else {
+ e1000_read_ich8_byte(hw, (i << 1) + old_bank_offset,
+ &low_byte);
+ udelay(100);
+ error = e1000_verify_write_ich8_byte(hw,
+ (i << 1) + new_bank_offset, low_byte);
+
+ if (error != E1000_SUCCESS)
+ sector_write_failed = TRUE;
+ else {
e1000_read_ich8_byte(hw, (i << 1) + old_bank_offset + 1,
&high_byte);
+ udelay(100);
}
+ }
+ /* If the write of the low byte was successful, go ahread and
+ * write the high byte while checking to make sure that if it
+ * is the signature byte, then it is handled properly */
+ if (sector_write_failed == FALSE) {
/* If the word is 0x13, then make sure the signature bits
* (15:14) are 11b until the commit has completed.
* This will allow us to write 10b which indicates the
high_byte = E1000_ICH8_NVM_SIG_MASK | high_byte;
error = e1000_verify_write_ich8_byte(hw,
- (i << 1) + new_bank_offset + 1, high_byte);
+ (i << 1) + new_bank_offset + 1, high_byte);
if (error != E1000_SUCCESS)
sector_write_failed = TRUE;
- if (sector_write_failed == FALSE) {
- /* Clear the now not used entry in the cache */
- hw->eeprom_shadow_ram[i].modified = FALSE;
- hw->eeprom_shadow_ram[i].eeprom_word = 0xFFFF;
- }
+ } else {
+ /* If the write failed then break from the loop and
+ * return an error */
+ break;
}
+ }
- /* Don't bother writing the segment valid bits if sector
- * programming failed. */
- if (sector_write_failed == FALSE) {
- /* Finally validate the new segment by setting bit 15:14
- * to 10b in word 0x13 , this can be done without an
- * erase as well since these bits are 11 to start with
- * and we need to change bit 14 to 0b */
- e1000_read_ich8_byte(hw,
- E1000_ICH8_NVM_SIG_WORD * 2 + 1 + new_bank_offset,
- &high_byte);
- high_byte &= 0xBF;
+ /* Don't bother writing the segment valid bits if sector
+ * programming failed. */
+ if (sector_write_failed == FALSE) {
+ /* Finally validate the new segment by setting bit 15:14
+ * to 10b in word 0x13 , this can be done without an
+ * erase as well since these bits are 11 to start with
+ * and we need to change bit 14 to 0b */
+ e1000_read_ich8_byte(hw,
+ E1000_ICH8_NVM_SIG_WORD * 2 + 1 + new_bank_offset,
+ &high_byte);
+ high_byte &= 0xBF;
+ error = e1000_verify_write_ich8_byte(hw,
+ E1000_ICH8_NVM_SIG_WORD * 2 + 1 + new_bank_offset, high_byte);
+ /* And invalidate the previously valid segment by setting
+ * its signature word (0x13) high_byte to 0b. This can be
+ * done without an erase because flash erase sets all bits
+ * to 1's. We can write 1's to 0's without an erase */
+ if (error == E1000_SUCCESS) {
error = e1000_verify_write_ich8_byte(hw,
- E1000_ICH8_NVM_SIG_WORD * 2 + 1 + new_bank_offset,
- high_byte);
- if (error != E1000_SUCCESS)
- sector_write_failed = TRUE;
+ E1000_ICH8_NVM_SIG_WORD * 2 + 1 + old_bank_offset, 0);
+ }
- /* And invalidate the previously valid segment by setting
- * its signature word (0x13) high_byte to 0b. This can be
- * done without an erase because flash erase sets all bits
- * to 1's. We can write 1's to 0's without an erase */
- error = e1000_verify_write_ich8_byte(hw,
- E1000_ICH8_NVM_SIG_WORD * 2 + 1 + old_bank_offset,
- 0);
- if (error != E1000_SUCCESS)
- sector_write_failed = TRUE;
+ /* Clear the now not used entry in the cache */
+ for (i = 0; i < E1000_SHADOW_RAM_WORDS; i++) {
+ hw->eeprom_shadow_ram[i].modified = FALSE;
+ hw->eeprom_shadow_ram[i].eeprom_word = 0xFFFF;
}
- } while (++sector_retries < 10 && sector_write_failed == TRUE);
+ }
}
return error;
void
e1000_get_bus_info(struct e1000_hw *hw)
{
+ int32_t ret_val;
+ uint16_t pci_ex_link_status;
uint32_t status;
switch (hw->mac_type) {
hw->bus_speed = e1000_bus_speed_unknown;
hw->bus_width = e1000_bus_width_unknown;
break;
+ case e1000_82571:
case e1000_82572:
case e1000_82573:
+ case e1000_80003es2lan:
hw->bus_type = e1000_bus_type_pci_express;
hw->bus_speed = e1000_bus_speed_2500;
- hw->bus_width = e1000_bus_width_pciex_1;
+ ret_val = e1000_read_pcie_cap_reg(hw,
+ PCI_EX_LINK_STATUS,
+ &pci_ex_link_status);
+ if (ret_val)
+ hw->bus_width = e1000_bus_width_unknown;
+ else
+ hw->bus_width = (pci_ex_link_status & PCI_EX_LINK_WIDTH_MASK) >>
+ PCI_EX_LINK_WIDTH_SHIFT;
break;
- case e1000_82571:
case e1000_ich8lan:
- case e1000_80003es2lan:
hw->bus_type = e1000_bus_type_pci_express;
hw->bus_speed = e1000_bus_speed_2500;
- hw->bus_width = e1000_bus_width_pciex_4;
+ hw->bus_width = e1000_bus_width_pciex_1;
break;
default:
status = E1000_READ_REG(hw, STATUS);
e1000_verify_write_ich8_byte(struct e1000_hw *hw, uint32_t index, uint8_t byte)
{
int32_t error = E1000_SUCCESS;
- int32_t program_retries;
- uint8_t temp_byte;
+ int32_t program_retries = 0;
- e1000_write_ich8_byte(hw, index, byte);
- udelay(100);
+ DEBUGOUT2("Byte := %2.2X Offset := %d\n", byte, index);
- for (program_retries = 0; program_retries < 100; program_retries++) {
- e1000_read_ich8_byte(hw, index, &temp_byte);
- if (temp_byte == byte)
- break;
- udelay(10);
- e1000_write_ich8_byte(hw, index, byte);
- udelay(100);
+ error = e1000_write_ich8_byte(hw, index, byte);
+
+ if (error != E1000_SUCCESS) {
+ for (program_retries = 0; program_retries < 100; program_retries++) {
+ DEBUGOUT2("Retrying \t Byte := %2.2X Offset := %d\n", byte, index);
+ error = e1000_write_ich8_byte(hw, index, byte);
+ udelay(100);
+ if (error == E1000_SUCCESS)
+ break;
+ }
}
+
if (program_retries == 100)
error = E1000_ERR_EEPROM;
}
/******************************************************************************
- * Writes a word to the NVM using the ICH8 flash access registers.
+ * Erases the bank specified. Each bank may be a 4, 8 or 64k block. Banks are 0
+ * based.
*
* hw - pointer to e1000_hw structure
- * index - The starting byte index of the word to read.
- * data - The word to write to the NVM.
- *****************************************************************************/
-#if 0
-int32_t
-e1000_write_ich8_word(struct e1000_hw *hw, uint32_t index, uint16_t data)
-{
- int32_t status = E1000_SUCCESS;
- status = e1000_write_ich8_data(hw, index, 2, data);
- return status;
-}
-#endif /* 0 */
-
-/******************************************************************************
- * Erases the bank specified. Each bank is a 4k block. Segments are 0 based.
- * segment N is 4096 * N + flash_reg_addr.
+ * bank - 0 for first bank, 1 for second bank
*
- * hw - pointer to e1000_hw structure
- * segment - 0 for first segment, 1 for second segment, etc.
+ * Note that this function may actually erase as much as 8 or 64 KBytes. The
+ * amount of NVM used in each bank is a *minimum* of 4 KBytes, but in fact the
+ * bank size may be 4, 8 or 64 KBytes
*****************************************************************************/
-static int32_t
-e1000_erase_ich8_4k_segment(struct e1000_hw *hw, uint32_t segment)
+int32_t
+e1000_erase_ich8_4k_segment(struct e1000_hw *hw, uint32_t bank)
{
union ich8_hws_flash_status hsfsts;
union ich8_hws_flash_ctrl hsflctl;
uint32_t flash_linear_address;
int32_t count = 0;
int32_t error = E1000_ERR_EEPROM;
- int32_t iteration, seg_size;
- int32_t sector_size;
+ int32_t iteration;
+ int32_t sub_sector_size = 0;
+ int32_t bank_size;
int32_t j = 0;
int32_t error_flag = 0;
/* Determine HW Sector size: Read BERASE bits of Hw flash Status register */
/* 00: The Hw sector is 256 bytes, hence we need to erase 16
* consecutive sectors. The start index for the nth Hw sector can be
- * calculated as = segment * 4096 + n * 256
+ * calculated as bank * 4096 + n * 256
* 01: The Hw sector is 4K bytes, hence we need to erase 1 sector.
* The start index for the nth Hw sector can be calculated
- * as = segment * 4096
- * 10: Error condition
- * 11: The Hw sector size is much bigger than the size asked to
- * erase...error condition */
+ * as bank * 4096
+ * 10: The HW sector is 8K bytes
+ * 11: The Hw sector size is 64K bytes */
if (hsfsts.hsf_status.berasesz == 0x0) {
/* Hw sector size 256 */
- sector_size = seg_size = ICH8_FLASH_SEG_SIZE_256;
+ sub_sector_size = ICH8_FLASH_SEG_SIZE_256;
+ bank_size = ICH8_FLASH_SECTOR_SIZE;
iteration = ICH8_FLASH_SECTOR_SIZE / ICH8_FLASH_SEG_SIZE_256;
} else if (hsfsts.hsf_status.berasesz == 0x1) {
- sector_size = seg_size = ICH8_FLASH_SEG_SIZE_4K;
+ bank_size = ICH8_FLASH_SEG_SIZE_4K;
+ iteration = 1;
+ } else if (hw->mac_type != e1000_ich8lan &&
+ hsfsts.hsf_status.berasesz == 0x2) {
+ /* 8K erase size invalid for ICH8 - added in for ICH9 */
+ bank_size = ICH9_FLASH_SEG_SIZE_8K;
iteration = 1;
} else if (hsfsts.hsf_status.berasesz == 0x3) {
- sector_size = seg_size = ICH8_FLASH_SEG_SIZE_64K;
+ bank_size = ICH8_FLASH_SEG_SIZE_64K;
iteration = 1;
} else {
return error;
/* Write the last 24 bits of an index within the block into Flash
* Linear address field in Flash Address. This probably needs to
- * be calculated here based off the on-chip segment size and the
- * software segment size assumed (4K) */
- /* TBD */
- flash_linear_address = segment * sector_size + j * seg_size;
- flash_linear_address &= ICH8_FLASH_LINEAR_ADDR_MASK;
+ * be calculated here based off the on-chip erase sector size and
+ * the software bank size (4, 8 or 64 KBytes) */
+ flash_linear_address = bank * bank_size + j * sub_sector_size;
flash_linear_address += hw->flash_base_addr;
+ flash_linear_address &= ICH8_FLASH_LINEAR_ADDR_MASK;
E1000_WRITE_ICH8_REG(hw, ICH8_FLASH_FADDR, flash_linear_address);
- error = e1000_ich8_flash_cycle(hw, 1000000);
+ error = e1000_ich8_flash_cycle(hw, ICH8_FLASH_ERASE_TIMEOUT);
/* Check if FCERR is set to 1. If 1, clear it and try the whole
* sequence a few more times else Done */
if (error == E1000_SUCCESS) {
}
+/******************************************************************************
+ * This function initializes the PHY from the NVM on ICH8 platforms. This
+ * is needed due to an issue where the NVM configuration is not properly
+ * autoloaded after power transitions. Therefore, after each PHY reset, we
+ * will load the configuration data out of the NVM manually.
+ *
+ * hw: Struct containing variables accessed by shared code
+ *****************************************************************************/
static int32_t
e1000_init_lcd_from_nvm(struct e1000_hw *hw)
{
projects / powerpc.git / blobdiff